? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c16a i dm t c = 25 c, pulse width limited by t jm 48 a i ar t c = 25 c16a e ar t c = 25 c25mj e as t c = 25 c 750 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-220, to-3p) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g to-3p 5.5 g g = gate d = drain s = source tab = drain ds99323e(03/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 10 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c 100 a r ds(on) v gs = 10 v, i d = 0.5 i d25 400 m pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab) ixta 16n50p ixtp 16n50p ixtq 16n50p v dss = 500 v i d25 = 16 a r ds(on) 400 m to-3p (ixtq) g d s (tab)
ixta 16n50p ixtp 16n50p ixtq 16n50p ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 9 16 s c iss 2250 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 240 pf c rss 12 pf t d(on) 24 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 28 ns t d(off) r g = 10 (external) 70 ns t f 25 ns q g(on) 43 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 15 nc q gd 12 nc r thjc 0.42 c/w r thcs (to-220) 0.25 c/w r thcs (to-3p) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 16 a i sm repetitive 48 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 16 a 400 ns -di/dt = 100 a/ s ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-3p outline to-263 (ixta) outline to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain
? 2006 ixys all rights reserved ixta 16n50p ixtp 16n50p ixtq 16n50p fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 012345678910 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 2. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 3. r ds(on) normalized to i d = 8a vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 16a i d = 8a fig. 4. r ds(on) normalized to i d = 8a vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 02468101214161820 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 2 4 6 8 10 12 14 16 18 20 44.555.566.57 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
ixta 16n50p ixtp 16n50p ixtq 16n50p ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 10 12 14 16 18 20 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 250v i d = 8a i g = 10ma fig. 10. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc 25s 1ms 100s r ds(on) limit 10m dc fig. 12. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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